MIM structure

ABSTRACT

Disclosed is a method of manufacturing a three dimensional (3D) metal-insulator-metal (MIM) capacitor in the back end of line, which can provide large and tunable capacitance values and meanwhile, does not interfere with the existing BEOL fabrication process. In one embodiment, a method for fabricating a semiconductor device includes: forming a first conductive feature on a semiconductor substrate; forming a second conductive feature on the semiconductor substrate; forming a first via structure over the first conductive feature; forming a first metallization structure over the first via structure, wherein the first metallization structure is conductively coupled to the first conductive feature through the first via structure; forming a conductive etch stop structure on the first metallization structure; forming a first via hole above the conductive etch stop structure and a second via hole above the second conductive feature, wherein the first via hole exposes the conductive etch stop structure and the second via hole is deeper than the first via hole; and forming a capacitor in the second via hole.

RELATED APPLICATION

This application claims the benefit of and priority to U.S. PatentProvisional Application No. 62/564,932, filed on Sep. 28, 2017, thecontent of which is incorporated herein.

BACKGROUND

A capacitor is a standard component in many electronic circuits. Acapacitor typically consists of first and second conductive electrodesseparated by a dielectric insulating layer disposed between the firstand second conductive electrodes. The conductive electrodes in acapacitor can be made of metals or semiconductors that are heavily dopedwith impurities, while the dielectric layer can be an oxide or otherinsulating materials (e.g., nitrides and ceramics). Compared to off-chipcapacitors, on-chip MIM (metal-insulator-metal) capacitors typicallyhave smaller capacitance values on the order of microfarads per squaremicrometer (μF μm⁻²) due to their restricted size.

In order to achieve effectively large capacitance values, a MIMcapacitor can be fabricated in a deep trench in the front end of line(FEOL) in a semiconductor substrate where active devices are fabricated,which offers a large capacitance value compared to a standard planarcapacitor. However, such deep trench MIM technology on the FEOL requiresadditional area on the semiconductor substrate and provides poor signalinterference. Therefore, it is desirable to provide a method for forminga MIM capacitor with a large capacitance and a small chip arearequirement.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that various features are not necessarily drawn to scale. In fact,the dimensions and geometries of the various features may be arbitrarilyincreased or reduced for clarity of illustration.

FIG. 1 illustrates a flow chart of an exemplary method for forming a MIMcapacitor on a semiconductor device, in accordance with someembodiments.

FIGS. 2A, 2B, 2C, 2D, 2E, 2F, 2G, 2H, 2I, and 2J illustratecross-sectional views of an exemplary semiconductor device with a MIMcapacitor during various fabrication stages, made by the method of FIG.1, in accordance with some embodiments.

FIGS. 3A, 3B, 3C and 3D illustrate exemplary cross-sectional views ofsemiconductor devices with MIM capacitors, in accordance with someembodiments.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

The following disclosure describes various exemplary embodiments forimplementing different features of the subject matter. Specific examplesof components and arrangements are described below to simplify thepresent disclosure. These are, of course, merely examples and are notintended to be limiting. For example, it will be understood that when anelement is referred to as being “connected to” or “coupled to” anotherelement, it may be directly connected to or coupled to the otherelement, or one or more intervening elements may be present.

The present disclosure provides various embodiments of an on-chip 3D MIMstructure and methods of forming the same. In some embodiments, the 3DMIM structure is provided in the back end of line (BEOL) of asemiconductor device where individual devices in the substrate areinterconnected with metallization structures and via structures inrespective dielectric layers. Such method allows a construction of a 3DMIM capacitor in a deep via hole through a plurality of dielectriclayers in the BEOL. Because of a large surface area from the deep viahole extending through the plurality of dielectric layers, a capacitorwith a large capacitance value compared to its planar counterpart with asame projected area can be formed. Further, such method allows aformation of the deep via hole and first and second electrodes of theMIM capacitor within the fabrication process of a via structure (e.g.,open a via hole and fill with metals) and a metallization structurewithout introducing additional fabrication steps. In some embodiments,such a deep via hole can be formed by protecting a shallow via holebottom with a conductive etch stop structure so that the underlyinglower metallization structure is protected from the etching solution.Therefore, such method is compatible with the fabrication process of avia structure and thus does not require global change to the fabricationprocess of the BEOL. By forming such a 3D MIM structure in the BEOLbased on such method, a MIM capacitor with a large and tunablecapacitance value can be achieved between an active component and ametallization (i.e., conductive) layer or between two horizontalmetallization lines in two nonadjacent metallization layers. Finally,such method does not add area burden to the FEOL and thus enhances anefficient use of substrate area for higher density ICs. Accordingly, theabove-mentioned issue may be advantageously avoided.

FIG. 1 illustrates a flowchart of a method 100 to form a semiconductordevice according to one or more embodiments of the present disclosure.It is noted that the method 100 is merely an example, and is notintended to limit the present disclosure. Accordingly, it is understoodthat additional operations may be provided before, during, and after themethod 100 of FIG. 1, and that some other operations may only be brieflydescribed herein. In some embodiments, operations of the method 100 maybe associated with cross-sectional views of a semiconductor device atvarious fabrication stages as shown in FIGS. 2A, 2B, 2C, 2D, 2E, 2F, 2G,2H, 2I, and 2J, respectively, which will be discussed in further detailbelow.

Referring now to FIG. 1, the method 100 starts with operation 102 inwhich a semiconductor substrate with at least two conductive features(e.g., a source, drain, and/or gate electrode of a transistor) isprovided. The method 100 continues to operation 104 in which a first viastructure is formed in a first inter-layer dielectric (ILD) layer. Insome embodiments, the first via structure is configured and positionedto allow the at least one conductive feature in the semiconductorsubstrate to be electrically coupled to another conductive feature orstructure through the first via structure. The method 100 continues tooperation 106 in which a first metallization structure is formed in afirst dielectric layer. In some embodiments, the first dielectric layeris formed over the first ILD layer. In some embodiments, the firstmetallization structure is electrically coupled to the first viastructure. The method 100 continues to operation 108 in which apatterned photoresist layer is formed over the first dielectric layerand the first metallization structure. In some embodiments, thepatterned photoresist layer is aligned with the first metallizationstructure. The method 100 continues to operation 110 in which aconductive etch stop structure is formed over the first metallizationlayer. In some embodiments, the conductive etch stop structure is formedto provide chemical resistance and etch selectivity to allow thesimultaneous etching of shallow via holes and deep via holes withinone-step etching process. In some embodiments, the conductive etch stopstructure may be formed by performing one etching processes on theconductive protection layer while using the patterned photoresist layeras a mask. In some embodiments, the conductive etch stop structure isaligned with the first metallization structure so that the conductiveetch stop structure and first metallization structure are electricallycoupled with each other. The method 100 continues to operation 112 inwhich a second ILD layer is formed. In some embodiments, the second ILDlayer is formed over the conductive etch stop structure and the firstdielectric layer. The method 100 continues to operation 114 in which ashallow via hole is formed in the second ILD layer and a deep via holeis also formed through the second ILD layer, the first dielectric layer,and the first ILD layer to the lower conductive feature on thesemiconductor substrate. The method 100 continues to operation 116 inwhich a second via structure in the first via hole and a first metalelectrode of the MIM capacitor in the deep via hole are formed. Themethod 100 continues to operation 118 in which a patterned capacitordielectric structure is formed on top of the first metal electrode inthe deep via hole. In some embodiments, the patterned capacitordielectric structure may be formed by performing one or more lithographyand etching processes. The method 100 continues to operation 120 inwhich a second metallization structure is formed in the seconddielectric layer and a second metal electrode on top of the patternedcapacitor dielectric structure in the deep via hole. In someembodiments, the second dielectric layer is formed over the second ILDlayer. In some embodiments, at least one conductive feature in thesubstrate is electrically connected to the second metallizationstructure through the first via structure, the first metallizationstructure, the conductive protection structure, and the second viastructure. In some embodiments, at least one conductive feature in thesubstrate is electrically connected to the second metallization layerthrough the vertical MIM capacitor.

As mentioned above, FIGS. 2A-2J illustrate, in a cross-sectional view, aportion of a semiconductor device 200 at various fabrication stages ofthe method 100 of FIG. 1. The semiconductor device 200 may be includedin a microprocessor, memory cell, and/or other integrated circuit (IC).Also, FIGS. 2A-2L are simplified for a better understanding of theconcepts of the present disclosure. Although the figures illustrate thesemiconductor device 200, it is understood the IC may comprise a numberof other devices such as resistors, capacitors, inductors, fuses, etc.,which are not shown in FIGS. 2A-2L, for purposes of clarity ofillustration.

FIG. 2A is a cross-sectional view of the semiconductor device 200including a substrate 202 with at least two conductive features 204 atone of the various stages of fabrication corresponding to operation 102of FIG. 1, in accordance with some embodiments. Although thesemiconductor device 200 in the illustrated embodiment of FIG. 2Aincludes only two conductive features (e.g., 204), it is understood thatthe illustrated embodiment of FIG. 2A and the following figures aremerely provided for illustration purposes. Thus, the semiconductordevice 200 may include any desired number of conductive features whileremaining within the scope of the present disclosure.

In some embodiments, the substrate 202 includes a silicon substrate.Alternatively, the substrate 202 may include other elementarysemiconductor material such as, for example, germanium. The substrate202 may also include a compound semiconductor such as silicon carbide,gallium arsenic, indium arsenide, and indium phosphide. The substrate202 may include an alloy semiconductor such as silicon germanium,silicon germanium carbide, gallium arsenic phosphide, and gallium indiumphosphide. In one embodiment, the substrate 202 includes an epitaxiallayer. For example, the substrate 202 may have an epitaxial layeroverlying a bulk semiconductor. Furthermore, the substrate 202 mayinclude a semiconductor-on-insulator (SOI) structure. For example, thesubstrate 202 may include a buried oxide (BOX) layer formed by a processsuch as separation by implanted oxygen (SIMOX) or other suitabletechnique, such as wafer bonding and grinding.

In some embodiments, the substrate 202 also includes various p-typedoped regions and/or n-type doped regions, implemented by a process suchas ion implantation and/or diffusion. Those doped regions includen-well, p-well, lightly doped region (LDD), heavily doped source anddrain (S/D), and various channel doping profiles configured to formvarious integrated circuit (IC) devices, such as a complimentarymetal-oxide-semiconductor field-effect transistor (CMOSFET), imagingsensor, and/or light emitting diode (LED). The substrate 202 may furtherinclude other functional features such as a resistor or a capacitorformed in and on the substrate. The substrate 202 further includeslateral isolation features provided to separate various devices formedin the substrate 202, for example shallow trench isolation (STI). Thevarious devices in the substrate 202 further include silicide disposedon S/D, gate and other device features for reduced contact resistanceand enhance process compatibility when coupled between devices throughlocal interconnections.

In an embodiment, the conductive features 204 can be a source, drain orgate electrode. Alternatively, the conductive features 204 may be asilicide feature disposed on a source, drain or gate electrode typicallyfrom a sintering process introduced by at least one of the processesincluding thermal heating, laser irradiation or ion beam mixing. Thesilicide feature may be formed on polysilicon gate (typically known as“polycide gate”) or by on source/drain (typically known as “salicide”)by a self-aligned silicide technique. In another embodiment, theconductive feature 204 may include an electrode of a capacitor or oneend of a resistor.

FIG. 2B is a cross-sectional view of the semiconductor device 200including a first via structure 208 in a first inter-layer dielectric(ILD) layer 206 at one of the various stages of fabrication thatcorresponds to operation 104 of FIG. 1, in accordance with someembodiments. As shown, the first via structure 208 is configured toextend through the first ILD layer 206 to electrically couple itself toone of the conductive features 204. Alternatively, the first viastructure 208 may be a conductive plug. In some further embodiments, thesemiconductor device 200 may include a first barrier layer 209surrounding sidewalls and bottom surface of the first via structure 208.

The first ILD layer 206 includes a material that is at least one of thefollowing materials, including silicon oxide, a low dielectric constant(low-k) material, other suitable dielectric material, or a combinationthereof. The low-k material may include fluorinated silica glass (FSG),phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), carbondoped silicon oxide (SiO_(x)C_(y)), Black Diamond® (Applied Materials ofSanta Clara, Calif.), Xerogel, Aerogel, amorphous fluorinated carbon,Parylene, BCB (bis-benzocyclobutenes), SiLK (Dow Chemical, Midland,Mich.), polyimide, and/or other future developed low-k dielectricmaterials. Since the material of a first ILD layer 206 will be used byother dielectric layers formed subsequently, for ease of discussion, thedielectric material is herein referred to as “material D.”

In some embodiments, the first via structure 208 includes a metalmaterial such as, for example, copper (Cu), or the like. In some otherembodiments, the first via structure 208 may include other suitablemetal materials (e.g., gold (Au), cobalt (Co), silver (Ag), etc.) and/orconductive materials (e.g., polysilicon) while remaining within thescope of the present disclosure. Similarly, since the material of thefirst via structure 208 will be used by other conductive structuresformed subsequently, for ease of discussion, the metal material isherein referred to as “material M”.

In some embodiments, the first barrier layer 209 includes a conductivematerial such as a metal, a metal alloy, or a metal nitride, forexample, tantalum nitride (TaN), tantalum (Ta), titanium nitride (TiN),titanium (Ti), cobalt tungsten (CoW), tungsten nitride (WN), or thelike. The first barrier layer 209 may effectively prevent metal atomsfrom diffusing into the first ILD layer 206 during a metal depositionprocess to form the first via structure 208, which will be discussedbelow. Similarly, since the material of the first barrier layer 209 willbe used by other barrier layers formed subsequently, for ease ofdiscussion, the material of the barrier layer 209 is herein referred toas “material B.”

The first via structure 208 may be formed by at least some of thefollowing process steps: using chemical vapor deposition (CVD), physicalvapor deposition (PVD), spin-on coating, and/or other suitabletechniques to deposit the material D over the substrate 202 with theconductive feature 204 to form an initial first ILD layer (the first ILDlayer 206 is a remaining portion of the initial first ILD layer afterthe later performed patterning process); performing one or morepatterning processes (e.g., a lithography process, a dry/wet etchingprocess, a soft/hard baking process, a cleaning process, etc.) to form avia hole through the initial first ILD layer; using CVD, PVD, and/orother suitable techniques to deposit the aforementioned material B alonga bottom surface and sidewalls of the via hole to surround the via hole;using CVD, PVD, E-gun, and/or other suitable techniques to fill the viahole with the material M, and polishing out excessive material M by aplanarization process (e.g., chemical-mechanical polishing) to form thefirst via structure 208 with the first barrier layer 209.

FIG. 2C is a cross-sectional view of the semiconductor device 200including a first metallization structure 212 formed in a firstdielectric layer 210 at one of the various stages of fabrication thatcorresponds to operation 106 of FIG. 1, in accordance with someembodiments. In some embodiments, the first dielectric layer 210including the first metallization structure 212 is herein referred to asthe “first metallization layer.”

As shown, the first metallization structure 212 is coupled to the firstvia structure 208, and horizontally extends over a respective width inthe first dielectric layer 210. In some embodiments, the firstmetallization structure 212 may be wider than the first via structure208. In some further embodiments, the semiconductor device 200 mayinclude a second barrier layer 213 surrounding sidewalls and bottomsurface of the first metallization structure 212. In some alternativeembodiments, the first metallization structure 212 can be directlycoupled to the conductive feature 204, i.e., the first via structure208, the first barrier layer 209, and the first ILD layer 206 may beoptional.

In some embodiments, the first dielectric layer 210 includes thematerial D; the first metallization structure 212 includes the materialM; and the second barrier layer 213 includes the material B. The firstmetallization structure 212 may be formed by at least some of thefollowing process steps: using CVD, PVD, spin-on coating, and/or othersuitable techniques to deposit the material D over the first ILD layer206 and the first via structure 208 to form an initial first dielectriclayer (the first dielectric layer 210 is a remaining portion of thisinitial first dielectric layer after the later performed patterningprocess); performing one or more patterning processes (e.g., alithography process, a dry/wet etching process, a soft/hard bakingprocess, a cleaning process, etc.) to form an opening through theinitial first dielectric layer; using CVD, PVD, and/or other suitabletechniques to deposit the aforementioned material B to surround theopening; using CVD, PVD, E-gun, and/or other suitable techniques to fillthe opening with the material M, and polishing out excessive material Mby a planarization process (e.g., chemical-mechanical polishing)polishing to form the first metallization structure 212 surrounded bythe second barrier layer 213.

FIG. 2D is a cross-sectional view of the semiconductor device 200including a first patterned photoresist layer 220 over the firstdielectric layer 210 and the first metallization structure 212 at one ofthe various stages of fabrication that corresponds to operation 108 ofFIG. 1, in accordance with some embodiments. As will be described below,the first patterned photoresist layer 220 is used to mask a conductiveetch stop structure 224 on top of the first metallization structure 212.Accordingly, in some embodiments, the first patterned photoresist layer220 is formed after a conventional patterning (e.g., photolithography)processes, to align with at least part of the first metallizationstructure 212 so as to allow one or more later formed conductivefeatures to be electrically couple to the first metallization structure212 through the later formed conductive etch stop structure.

In some embodiments, the initial photoresist layer 220 may include anegative or positive tone photoresist layer that is patternable inresponse to a photolithography light source. In some alternativeembodiments, the initial photoresist layer 220 may include an e-beam(electron beam) resist layer (e.g., poly methyl methacrylate, methylmethacrylate, etc.) that is patternable in response to an e-beamlithography energy source. In some embodiments, the initial photoresistlayer is formed over the first dielectric layer 210 and the firstmetallization structure 212 using a deposition process known in the artsuch as spin-coating, spray-coating, dip-coating, roller-coating, or thelike. The initial photoresist layer 220 is then patterned in alithography process that may involve various exposure, developing,baking, stripping, etching, and rinsing processes. As a result, thepatterned photoresist layer 220 is formed such that an opening 222exposes at least a portion of the top surface of the first metallizationstructure 212, as shown in FIG. 2D.

FIG. 2E is a cross-sectional view of the semiconductor device 200including a conductive etch stop structure 224 at one of the variousstages of fabrication that corresponds to operation 110 of FIG. 1, inaccordance with some embodiments. In some embodiments, the conductiveetch stop structure 224 may be formed from a conductive material suchas, for example, titanium nitride (TiN), or the like. In someembodiments, the conductive etch stop structure 224 may be formed byusing CVD, PVD, spin-on coating, and/or other suitable techniques todeposit the above-mentioned conductive material (e.g., TiN) over thepatterned photoresist layer 220 and the first metallization structure212, followed by a wet etching of the patterned photoresist layer 220.

In some embodiments, the conductive etch stop structure 224 is metalnitrides, e.g., TiN. In some embodiments, this conductive etch stop TiNlayer can be the same as the barrier layer. In some embodiment, thethickness of such conductive etch stop layer is at least 100 nm. In someembodiments, after the deposition, the first patterned photoresist layer220 may be removed by one or more chemical cleaning processes usingacetone, 1-Methyl-2-pyrrolidon (NMP), Dimethyl sulfoxide (DMSO), orother suitable removing chemicals. In some embodiments, the chemicalsused may need to be heated to temperatures higher than room temperatureto effectively dissolve the first patterned photoresist layer 220. Theselection of the remover is determined by the type and chemicalstructure of the first patterned photoresist layer 220, the firstmetallization structure 212, the first dielectric layer 210, as well asthe substrate to assure the chemical compatibility of these layers withthe chemical cleaning process. In some embodiments, this cleaningprocess is then followed by a rinsing process using isopropyl alcohol orthe like, followed by rinsing using deionized water.

As mentioned above, since the patterned photoresist layer 220 is formedto align with at least part of the first metallization structure 212,the conductive etch stop structure 224 can be formed as an intermediateconductive structure to allow the first metallization structure 212 tobe electrically coupled by one or more later formed conductive featuresafter the photoresist layer 220 is removed, as described above. Furtherin some embodiments, the patterned photoresist layer 220 may be narrowerthan the first metallization structure 212 and the conductive etch stopstructure 224 remained from the patterning process may be narrower thanthe first metallization structure 212, which will be discussed infurther detail below.

FIG. 2F is a cross-sectional view of the semiconductor device 200including a second ILD layer 230 formed over the conductive etch stopstructure 224, the first dielectric layer 210, and the firstmetallization structure 212 at one of the various stages of fabricationthat corresponds to operation 114 of FIG. 1, in accordance with someembodiments. The second ILD layer 230 includes the material D similar tothe one used in the first ILD layer 206, which can be formed usingchemical vapor deposition (CVD), physical vapor deposition (PVD),spin-on coating, and/or other suitable techniques.

FIG. 2G is a cross-sectional view of the semiconductor device 200including a via hole 237 formed in the second ILD layer 230 and a deepvia hole 231 which may extend through multiple IDL layers and/ordielectric layers, e.g., the first and the second ILD layers (e.g., 206and 230) and the first dielectric layer (e.g., 210) at one of thevarious stages of fabrication that corresponds to operation 114 of FIG.1, in accordance with some embodiments. In some embodiments, the viahole 237 and 231 may be first patterned by performing a conventionalphotolithography followed by a wet/dry etching process.

As mentioned above, in some embodiments, prior to deposition of thesecond ILD layer 230, the top surface of the first metallization layer212 is terminated with the conductive etch stop structure 224 made of amaterial B so as to stop the etching at the surface of 224 to form thevia hole 237, while the etching process in the dielectric layers cancontinue to a desired depth to form the deep via hole 231. Thisconductive etch stop structure 224 provides a higher etch resistanceagainst the chemical used to conduct the etching of dielectric materials(the first and the second ILD layers and the first dielectric layer)than the etch resistance of the material D. Therefore, the conductiveetch stop structure 224 may prevent the etching in the material M in themetallization layer 212 and provide a control of etching the deep viahole 231 without affecting the existing interconnections.

FIG. 2H is a cross-sectional view of the semiconductor device 200including a second via structure 238 formed in the second ILD layer 230and a first metal electrode 232 on sidewalls and bottom surface of thedeep via hole 231 of a MIM capacitor at one of the various stages offabrication that corresponds to operation 116 of FIG. 1, in accordancewith some embodiments. As shown, the second via structure 238 extendsthrough the second ILD layer 230 to electrically couple to theconductive etch stop structure 224. In some alternative embodiments, thesecond via structure 238 may be a conductive plug. In some furtherembodiments, the semiconductor device 200 may include a third barrierlayer 239 surrounding sidewalls and bottom surface of the second viastructure 238. As such, the second via structure 238 couples to theconductive protection structure 224 through the third barrier layer 239.

In some embodiments, the second via structure 238 also includes thematerial M, e.g., copper (Cu), tungsten (W), or a combination thereof,similar to the first via structure 208. In some embodiments, the thirdbarrier layer 239 includes material B, e.g., tantalum nitride (TaN),tantalum (Ta), titanium nitride (TiN), titanium (Ti), cobalt tungsten(CoW), tungsten nitride (WN), or the like, similar to the first barrierlayer 209. In some embodiments, the second via structure 238 may benarrower than the conductive etch stop structure 224.

The second via structure 238 may be formed by at least one combinationof the following process steps: using CVD, PVD, and/or other suitabletechniques to deposit the aforementioned material B along a bottomsurface and sidewalls of the via holes 237 and 231 to surround the viaholes 237 and 231; using CVD, PVD, E-gun, and/or other suitabletechniques to deposit material M, and polishing out excessive material Mby a planarization process (e.g., chemical-mechanical polishing) to formthe second via structure 238 with the third barrier layer 239. In someembodiments, the material M which is thick enough to fill the via hole237 to form the second via structure 238 is not thick enough to fill thedeep via hole 231 and thus can only be deposited on the sidewalls andbottom surface of the deep via hole 231. As a result, the first metalelectrode 232 in a first MIM capacitor can be simultaneously formedtogether with the formation process of the second via structure 238. Insome further embodiments, the semiconductor device 200 may include afourth barrier layer 233 surrounding the sidewalls and bottom surface ofthe first deep via hole 231. As such, the first metal electrode 232 of afirst MIM capacitor couples to the conductive feature 204 through thefourth barrier layer 233. Using the present method, a single stepetching of normal via holes for vertical via interconnects and deep viaholes for vertical MIM capacitors can be achieved across threedielectric layers in the BOEL. Within the same projected geometricsurface area, this method allows larger surface areas and thus largercapacitance values. For example, more than 3 dielectric layers can beused to form the 3D MIM capacitor, which will be discussed further indetail in FIG. 3.

In some embodiments, the sidewalls and bottom surface of the deep viahole 231 can be roughened by depositing an insulating material to createa surface with large roughness. In some embodiments, a sidewall withlarge roughness can be also created using a wet/dry etching method. Insome embodiments, a roughness can be also created in the first metalelectrode during or after the metal deposition process. Thus, thecapacitance value can be further increased compared to the one with aflat sidewall surface.

FIG. 2I is a cross-sectional view of the semiconductor device 200including a capacitor dielectric structure 240 on the second ILD layer230 and on the first metal electrode 232 on the side wall of the deepvia hole 231 at one of the various stages of fabrication thatcorresponds to operation 118 of FIG. 1, in accordance with someembodiments.

In some embodiments, this capacitor dielectric structure 240 includesthe material D. In some embodiments, the capacitor dielectric structure240 can be structured using a plurality of layers of material D to forma multilayer structure in order to achieve a higher capacitance value,and/or a low equivalent series resistance (ESR) and equivalent seriesinductance (ESL) in a practical capacitor, which are parameters whenusing MIM capacitors in devices for high frequency applications.

In some embodiments, the dielectric layer 240 can be formed by anodizingthe first metal electrode 232 at a positive potential in an electrolyte,the thickness of which depends on the potential and time. This methodallows a complete surface termination of the first metal electrode 232with a dielectric material 240 for insulating purposes. Since thesurface of the first metal electrode 232 is terminated by a layer ofpassive insulating oxide, the top metal electrode can therefore beself-aligned without additional photolithography processes. The firstmetal electrode 232 in this case can be Al, Ti, Ta, and Nb, inaccordance with some embodiments.

In some embodiments, the capacitor dielectric structure 240 can bedeposited using at least one of the techniques including low pressurechemical vapor deposition (LPCVD) and atomic layer deposition (ALD) toprovide a uniform step and deep coverage of the deep via hole 231. Insome embodiments, materials that can be used in a capacitor dielectricstructure 240 include various insulating materials such as, for exampleAl₂O₃, HfO₂, SiO₂, La₂O₃, ZrO₃, Ba—Sr—Ti—O, Si₃N₄ and laminate of amixture thereof. In some embodiments, the capacitor dielectric structure240 comprises a material D with a high dielectric constant, e.g., ahigh-k dielectric material. The capacitor dielectric structure 240 canbe formed by various processes including deposition a dielectric layerusing PVD, CVD and the like, photolithography and a dry/wet etchingprocess. The thickness of this capacitor dielectric structure 240 iscontrolled by the desired capacitance value, which is a function of thearea of the deep via hole 231 and the dielectric constant of thedielectric material of the capacitor dielectric structure 240. In someembodiments, the thickness of the capacitor dielectric structure 240that contains an oxide can be in a range of a few tens of nanometers toa few hundreds of nanometers, e.g., 36-190 nanometers.

In some embodiments, when MIM capacitors are used in RF circuits, thedielectric loss may be extremely small and the series resistance of thewiring may be minimized for high frequency applications. This indicatesthat it is desirable to use short interconnect wires with low specificresistance. As MIM-capacitors are constructed using the back-endmetallization layers, the process temperature for the MIM capacitors,particularly the deposition temperature of the capacitor dielectricstructure 240, may be low enough to be compatible with the metallizationstack and the low-k dielectric layers (e.g., ILD layers (206 and 230)and metallization dielectric layers (210)).

FIG. 2J is a cross-sectional view of the semiconductor device 200including a second metallization structure 251 and a second metalelectrode 252 formed in a second dielectric layer 250 at one of thevarious stages of fabrication that corresponds to operation 120 of FIG.1, in accordance with some embodiments. In some embodiments, the seconddielectric layer 250 including the second metallization structures 251is herein referred to as the “second metallization layer.” In someembodiments, a thickness of the second metal electrode 252 is in a rangeof a few tens of nanometers to a few hundreds of nanometers, e.g., ≥400nanometers.

In some embodiments, the second dielectric layer 250 includes thematerial D; and the second metallization structure 251 and the secondmetal electrode 252 include the material M. In some embodiments, abarrier layer (not shown) can be deposited before the deposition of thesecond metallization structure 251 and the second metal electrode 252.The second metallization structure 251 and the second metal electrode252 may be formed by at least some of the following process steps: usingCVD, PVD, spin-on coating, and/or other suitable techniques to depositthe material D over the second ILD layer 230, the second via structure238, and the insulating layer 250 to form a second dielectric layer (thesecond dielectric layer 250 is a remaining portion of this initialsecond dielectric layer after the later performed patterning process);performing one or more patterning processes (e.g., a lithographyprocess, a dry/wet etching process, a soft/hard baking process, acleaning process, etc.) to form an opening through the second dielectriclayer; using CVD, PVD, E-gun, and/or other suitable techniques to fillthe opening with the material M, and polishing out excessive material Mby a planarization process (e.g., chemical-mechanical polishing) to formthe second metallization structure 251 and the second metal electrode252.

Although the above-illustrated semiconductor device 200 (FIGS. 2A-2J)includes only two metallization layers (e.g., 210 and 250), any desirednumber of metallization layers can be included in the semiconductordevice 200 while remaining within the scope of the present disclosure.When additional metallization layers are included in the semiconductordevice 200, in order to electrically couple respective metallizationstructures in those additional metallization layers, a plurality of viastructures may be used. It is noted that at least one conductive etchstop structure (e.g., 224) may be formed between one of the plurality ofvia structures (e.g., 238) and its corresponding lower metallizationstructure (e.g., 212).

Moreover, although the above-illustrated semiconductor device 200 (FIG.2A-2J) includes one deep via hole where the vertical MIM capacitor(232/233, 240 and 252) is formed is in direct contact with theconductive feature 203 on or in the semiconductor substrate 202, anyposition through the back-end oxide can be used to incorporate the deepvia hole for the construction of the MIM capacitor (232/233, 240 and252). Such that, although the above-illustrated semiconductor device 200includes a vertical MIM capacitor (232/233, 240 and 252) which extendsfrom the second metallization layer 250 to the conductive feature 203 onthe semiconductor substrate 200, any numbers of deep vertical MIMcapacitor that electrically couple to any desired interconnection levelscan be included in the semiconductor device 200 at any position in theback-end oxide while remaining within the scope of the presentdisclosure. Satisfying capacitance values and dynamic responseproperties can be achieved by adjusting the thickness of the dielectricstacks (e.g., number of IDLs and metallization dielectric layers) andopening area as well as the dielectric constant and thickness of thecapacitor dielectric structure between the first and the second metalelectrodes.

FIG. 3A-3D are exemplary cross-sectional views of a semiconductor device200 showing a MIM capacitor in a BEOL on a semiconductor substrate.These are, of course, merely examples and are not intended to belimiting. For example, the capacitor can be at any position within theBEOL 203 between any metallization structures. For another example, thecapacitance can extend across any numbers of ILDs and metallizationdielectric layers.

FIG. 3A illustrates an exemplary cross-sectional view of a semiconductordevice 200 with a MIM capacitor in a BEOL 203. The MIM capacitor(232/233, 240 and 252) is electrically coupled to a conductive feature204 in a substrate 202. A second metal electrode 252 of the MIMcapacitor is in the second metallization layer. In the presentembodiment, the MIM capacitor is formed across two ILD layers (e.g., 206and 230) and one dielectric layer of a respective metallization layer(e.g., 210). In some embodiments, the depth of such deep via hole 231where the MIM capacitor is built can be in a range of a few hundreds ofnanometers to a few micrometers, e.g., 2 micrometers (μm). As discussedabove in FIG. 2G, the deep via hole 231 where the 3D MIM capacitor isbuilt and the first metal electrode 232 of the MIM capacitor can beachieved together with the fabrication process of a second via structure238 without introducing additional steps. It is noted that more ILDs andmetallization dielectric layers can be constructed on top of the secondmetallization structures 251, the second metal electrode of the MIMcapacitor 252, and metallization dielectric layer 250.

FIG. 3B illustrates a MIM capacitor in the BEOL 203 that is electricallycoupled to a third metallization structure 282 and a first metallizationstructure 212. In some embodiments, the first metallization structure212 can be electrically coupled to a conductive feature 204 in asubstrate 202 through a first via structure 208. In some embodiments,the MIM capacitor including a first metal electrode 262/a barrier layer263, a dielectric layer 270, and a second metal electrode 282) is formedthrough second and third ILD layers (e.g., 260 and 230) and a secondmetallization dielectric layer (e.g., 240). In some embodiments, thedepth of the deep via hole can be in a range of a few hundreds ofnanometers to a few micrometers, e.g., 2 micrometers (μm). As discussedabove in FIG. 2, the deep via hole where the 3D MIM capacitor is builtand the first metal electrode of the capacitor 262 can be achievedtogether with the fabrication process of a third via structure 268without introducing additional steps, which is enabled by theintroduction of a conductive etch stop structure 254 at the bottom ofthe third via structure 268 to prevent chemical etching of the lowersecond metallization structure 242. In some embodiments, the thicknessof the conductive etch stop structure 254 can be in a range of a fewtens of nanometers to a few hundreds of nanometers, e.g., 100 nm. Inthis present embodiment, the deep via hole where the 3D MIM capacitor isbuilt and the second metal electrode 282 of the capacitor can beachieved together with the fabrication process of the thirdmetallization structure 281 without introducing additional steps. It isnoted that more ILDs and metallization dielectric layers can beconstructed on the third metallization structures 281, the second metalelectrode 282 of the MIM capacitor (262/263, 270, and 282), andmetallization dielectric layer 270. In some embodiments, a thickness ofthe second metal electrode 282 is in a range of a few tens of nanometersto a few hundreds of nanometers, e.g., ≥400 nanometers.

FIG. 3C illustrates a MIM capacitor in the BEOL 203 that is electricallycoupled to a conductive feature 204 in a substrate 202 and a thirdmetallization structure 282, which serves as a second metal electrode ofthe capacitor. In the present embodiment, the MIM capacitor is formedacross first, second and third ILD layers (e.g., 206, 230 and 260) andfirst and second metallization dielectric layer (e.g., 210 and 240). Insome embodiments, the depth of such deep via hole where the MIMcapacitor is built can be in a range of a few hundreds of nanometers toa few micrometers, e.g., 4 micrometers (μm). As discussed above in FIG.2, the deep via hole where the 3D MIM capacitor is built and the firstmetal electrode 262 of the capacitor can be achieved together with thefabrication process of a third via structure 268 without introducingadditional steps. In some embodiments, the thickness of the conductiveetch stop structure 254 between the third via structure 268 and thesecond metallization structure 242 is thicker than the one used whencreating a deep via hole across three dielectric layers as illustratedin FIGS. 3A and 3B. In some embodiments, the thickness of the conductiveetch stop structure 254 can be in a range of a few tens of nanometers toa few hundreds of nanometers, e.g., 150 nm. In this present embodiment,the deep via hole where the 3D MIM capacitor is built and the secondmetal electrode 282 of the capacitor can be achieved together with thefabrication process of the third metallization structure 281 withoutintroducing additional steps. It is noted that more ILD layers andmetallization dielectric layers can be constructed on the third ILDlayer 280, the third metallization structures 281, the second metalelectrode of the MIM capacitor 282, and the capacitor dielectric layer270.

FIG. 3D illustrates a design with multiple MIM capacitors in a singledeep via hole to further increase the capacitance density (in μF cm⁻²)within a projected device area, in accordance with some embodiments. Insome embodiments, the capacitance values between two metallization linescan be larger. Besides tuning the physical dimensions of the deep viaholes, thickness and dielectric function of the capacitor dielectricstructure for larger capacitance values, two or more capacitors can beconstructed in the same deep via hole and further connected in parallel.In the present embodiment, after deposition of the second electrode 282of the first MIM capacitor (denoted as “282/270/262” hereinafter), asecond capacitor dielectric structure 285 can be patterned on top of thesecond electrode 282 of the first MIM capacitor, followed by adeposition of the third metallization structure 281 which serves as asecond electrode 286 of the second MIM capacitor (denoted as“286/285/282” hereinafter). In some embodiments, the first and thesecond capacitor share one metal electrode 282. It should be noted thatthe metal electrode 286 and 262 can be electrically coupled throughinterconnections in the dielectric layer 280, so that the capacitancevalue between the metal electrode 282 and the conductive feature 204 onthe semiconductor substrate 202 equals to a summation of the capacitancevalues of the first and the second MIM capacitors, e.g., 282/270/262 and286/285/282, within the deep via hole. In some embodiments, the sharedmetal electrode 282 is electrically coupled to later metallizationstructures and/or interconnect via structures. These are, of course,merely examples and are not intended to be limiting. For example, morethan two MIM capacitors can be stack in one deep via hole. In someembodiments, the thickness of the conductive etch stop structure 254between the third via structure 268 and the second metallizationstructure 242 is thicker than the one used when creating a deep via holeacross three dielectric layers. In some embodiment, the thickness of theconductive etch stop structure 254 can be in a range of a few tens ofnanometers to a few hundreds of nanometers, e.g., 150 nm. It is notedthat more ILDs and metallization dielectric layers can be constructed onthe third ILD layer 280, the third metallization structures 281, thesecond metal electrode 286 of the second MIM capacitor, the firstcapacitor dielectric layer 270, the shared metal electrode 282, and thesecond capacitor dielectric layer 285. In some embodiments,interconnects between metal electrodes of MIM capacitors within the sameor across different deep via holes in order to connect them in series orparallel for proper capacitance values are not shown for clarificationpurpose.

The foregoing outlines features of several embodiments so that thoseordinary skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

In an embodiment, a method for fabricating a semiconductor devicecomprising: forming a first conductive feature on a semiconductorsubstrate; forming a second conductive feature on the semiconductorsubstrate; forming a first via structure over the first conductivefeature; forming a first metallization structure over the first viastructure, wherein the first metallization structure is conductivelycoupled to the first conductive feature through the first via structure;forming a conductive etch stop structure on the first metallizationstructure; forming a first via hole above the conductive etch stopstructure and a second via hole above the second conductive feature,wherein the first via hole exposes the conductive etch stop structureand the second via hole is deeper than the first via hole; and forming acapacitor in the second via hole.

In another embodiment, a semiconductor device comprising: first andsecond conductive features on a semiconductor substrate; first andsecond metallization layers configured on the semiconductor substrateabove the first and second conductive features, wherein the first andsecond metallization layers each comprises a respective metallizationstructure formed in a respective dielectric layer; first and second viastructures in respective dielectric layers, wherein the first viastructure extends from the first conductive feature to the firstmetallization layer and wherein the second via structure extends fromthe first metallization layer to the second metallization layer so as toelectrically couple the second metallization structure to the firstconductive feature through the first metallization structure; aconductive etch stop structure at the bottom of the second via structureand on at least part of the first metallization structure of the firstmetallization layer to electrically couple the first metallizationstructure and the second via structure; and a capacitor embedded andoriented transversely in a plurality of dielectric layers.

Yet in another embodiment, a semiconductor device comprising: aplurality of metallization structures electrically coupled through aplurality of via structures in a plurality of dielectric layers; aplurality of conductive etch stop structures on the plurality ofmetallization structures; and a plurality of capacitors embedded andoriented transversely in the plurality of dielectric layers, whereineach of the capacitors comprises a capacitor dielectric layer sandwichedbetween first and second metal electrodes.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device comprising: first andsecond conductive features on a semiconductor substrate; first andsecond metallization layers configured on the semiconductor substrateabove the first and second conductive features, wherein the first andsecond metallization layers each comprises a respective metallizationstructure formed in first and second dielectric layers, respectively;first and second via structures in third and fourth dielectric layers,respectively, wherein the first via structure extends from the firstconductive feature to the first metallization layer and wherein thesecond via structure extends from the first metallization layer to thesecond metallization layer so as to electrically couple the secondmetallization structure to the first conductive feature through thefirst metallization structure; a conductive etch stop structure at thebottom of the second via structure and on at least part of the firstmetallization structure of the first metallization layer to electricallycouple the first metallization structure and the second via structure;and a capacitor comprising a first metal electrode, a second metalelectrode and a dielectric structure sandwiched between the first andsecond metal electrodes, wherein the first metal electrode comprises afirst sidewall, a second sidewall opposite the first sidewall, a firstbottom portion that integrally connects the first and second sidewalls,and first space formed between the first and second sidewalls and abovethe first bottom portion, wherein the first and second sidewalls and thefirst space each extend transversely through at least two of the first,second, third and fourth dielectric layers, wherein the dielectricstructure comprises a third sidewall, a fourth sidewall opposite thethird sidewall, second bottom portion that integrally connects the thirdand fourth sidewall, and second space formed between the third andfourth sidewalls and above the second bottom portion, wherein the thirdand fourth sidewalls and the second space each extend into the firstspace and through at least two of the first, second, third and fourthdielectric layers, and wherein the second metal electrode comprises afifth sidewall and sixth sidewall opposite the fifth sidewall, whereinthe fifth and sixth sidewalls each extend into the second space andthrough at least two of the first, second, third and fourth dielectriclayers.
 2. The semiconductor device according to claim 1, wherein theconductive etch stop structure comprises titanium nitride (TiN).
 3. Thesemiconductor device according to claim 1, wherein a thickness of theconductive etch stop structure is equal to or greater than 100nanometers.
 4. The semiconductor device according to claim 1, whereinthe capacitor comprises at least one first portion extendingtransversely through the plurality of dielectric layers and at least onesecond portion oriented parallel to the dielectric layers.
 5. Thesemiconductor device according to claim 1, wherein the capacitorcomprises a first electrode, wherein the first electrode of thecapacitor comprises tungsten.
 6. The semiconductor device according toclaim 5, wherein the first electrode of the capacitor is electricallycoupled to the second conductive feature on the semiconductor substrate.7. A semiconductor device comprising: a plurality of metallizationstructures electrically coupled through a plurality of via structures ina plurality of dielectric layers; a plurality of conductive etch stopstructures on the plurality of metallization structures; and a pluralityof capacitors embedded and oriented transversely in the plurality ofdielectric layers, wherein each of the capacitors comprises a capacitordielectric layer sandwiched between first and second metal electrodes,wherein the first metal electrode comprises a first sidewall, a secondsidewall opposite the first sidewall, a first bottom portion thatintegrally connects the first and second sidewalls, and first spaceformed between the first and second sidewalls and above the first bottomportion, wherein the first and second sidewalls and the first space eachextend transversely through at least two of the first, second, third andfourth dielectric layers, wherein the capacitor dielectric layercomprises a third sidewall, a fourth sidewall opposite the thirdsidewall, second bottom portion that integrally connects the third andfourth sidewall, and second space formed between the third and fourthsidewalls and above the second bottom portion, wherein the third andfourth sidewalls and the second space each extend into the first spaceand through at least two of the first, second, third and fourthdielectric layers, and wherein the second metal electrode comprises afifth sidewall and sixth sidewall opposite the fifth sidewall, whereinthe fifth and sixth sidewalls each extend into the second space andthrough at least two of the first, second, third and fourth dielectriclayers.
 8. The semiconductor device according to claim 7, wherein athickness of the first metal electrodes of the plurality of capacitorsis equal to or greater than 200 nanometers.
 9. The semiconductor deviceaccording to claim 7, wherein a thickness of the capacitor dielectricstructures of the plurality of capacitors is in a range of a few tens ofnanometers to a few hundreds of nanometers.
 10. The semiconductor deviceaccording to claim 7, wherein a thickness of the second metal electrodesof the plurality of capacitors is equal to or greater than 400nanometers.
 11. The semiconductor device according to claim 7, wherein adepth of the deep via holes is equal to or greater than 2 micrometers.12. The semiconductor device according to claim 7, wherein a thicknessof the plurality of conductive etch stop layers is equal to or greaterthan 100 nanometers, wherein the plurality of conductive etch stoplayers is configured to allow a forming of a plurality of shallow viaholes on the plurality of conductive etch stop structures and aplurality of deep via holes across at least two of the plurality ofdielectric layers during one single semiconductor etching process.
 13. Asemiconductor device comprising: a conductive feature formed in asemiconductor substrate; a metallization layer formed above theconductive feature, wherein the metallization layer comprises arespective metallization structure formed in a first dielectric layerdisposed above the semiconductor substrate; a via structure formed in asecond dielectric layer disposed between the first dielectric layer andthe semiconductor substrate, wherein the first via structure extendsfrom the conductive feature to the metallization layer so as toelectrically couple the metallization structure to the conductivefeature; a conductive etch stop structure disposed on at least part ofthe metallization structure of the metallization layer, wherein theconductive etch stop structure is formed in a third dieletric layerdisposed above the first dielectric layer; and a capacitor comprising afirst metal electrode, a second metal electrode and a dielectricstructure sandwiched between the first and second metal electrodes,wherein the first metal electrode comprises a first sidewall, a secondsidewall opposite the first sidewall, a first bottom portion thatintegrally connects the first and second sidewalls, and first spaceformed between the first and second sidewalls and above the first bottomportion, wherein the first and second sidewalls and the first space eachextend transversely through the first, second and third dielectriclayers, wherein the dielectric structure comprises a third sidewall, afourth sidewall opposite the third sidewall, second bottom portion thatintegrally connects the third and fourth sidewall, and second spaceformed between the third and fourth sidewalls and above the secondbottom portion, wherein the third and fourth sidewalls and the secondspace each extend into the first space and through the first, second andthird dielectric layers, and wherein the second metal electrodecomprises a fifth sidewall and a sixth sidewall opposite the fifthsidewall, wherein the fifth and sixth sidewalls each extend into thesecond space and through at least two of the first, second, third andfourth dielectric layers.
 14. The semiconductor device according toclaim 13, wherein the conductive etch stop structure comprises titaniumnitride (TiN).
 15. The semiconductor device according to claim 13,wherein a thickness of the conductive etch stop structure is equal to orgreater than 100 nanometers.
 16. The semiconductor device according toclaim 13, wherein the capacitor comprises at least one first portionextending transversely through the plurality of dielectric layers and atleast one second portion oriented parallel to the dielectric layers. 17.The semiconductor device according to claim 13, wherein the capacitorcomprises a first electrode, wherein the first electrode of thecapacitor comprises tungsten.
 18. The semiconductor device according toclaim 17, wherein the first electrode of the capacitor is electricallycoupled to the second conductive feature on the semiconductor substrate.19. The semiconductor device according to claim 13, wherein thecapacitor comprises a capacitor dielectric layer sandwiched betweenfirst and second metal electrodes, and wherein each of the capacitordielectric layer, and the first and second metal electrodes extendtransversely through at least two of the first, second, third and fourthdielectric layers.
 20. The semiconductor device according to claim 19,wherein the first electrode comprises tungsten and is electricallycoupled to the second conductive feature on the semiconductor substrate.